Quantum interference device and method for processing electron w

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357 22, 357 30, H01L 29161, H01L 2719

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051574675

ABSTRACT:
A quantum interference device includes a source, a drain and waveguides with quantum structures between the source and the drain. An electron wave from the source that is confined in the waveguides is split into plural electron waves. The phase difference between the split electron waves is controlled and the split electron waves are combined into a single electron wave. The combined electron wave is directed to the drain or out of the waveguides according to an energy state of the combined electron wave by a real space transfer such as a tunneling effect. The phase difference control may be achieved by varying an electric field, a magnetic field, or light.

REFERENCES:
patent: 4882608 (1989-11-01), Smith, III
patent: 4912451 (1990-03-01), Sugiyama et al.
patent: 5003360 (1991-03-01), Okada et al.
"Proposed Structure for Large Quantum Interference Effect" by S. Datta et al., Applied Physics Letter vol. 48, No. 7, 17 Feb. 1986 pp. 487-489.
"Valley Selective Tunneling Transistor Based on Valley Discontinuties in AIGaAs Heterostructures" Jasprit Singh, Applied Physics Letters vol. 55 No. 25, 18 Dec. 1989 pp. 2652-2654.

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