Semiconductor device having low resistance values at connection

Details Semiconductor device having low resistance values at connection Semiconductor device having low resistance values at connection

1992-11-12

1996-03-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257758, 257752, H01L 2348, H01L 2352, H01L 2940

Patent

active

055005608

ABSTRACT:
In a semiconductor device having a first conductor layer (25) formed on a first insulator layer (23) and a second insulator layer (29) formed on the first conductor layer, a second conductor layer (31) has a primary conductor film (35) formed on the second insulator layer, a secondary conductor film (37) formed on the primary conductor film, and a ternary conductor film (63) formed on the secondary conductor film. The second insulator layer has a recessed surface (29b) which defines a contact perforation exposing a predetermined area of an upper surface (25a) of the first conductor layer. The secondary conductor film is further formed on the recessed surface and the predetermined area. The primary conductor film has a primary resistance value. The secondary conductor film has a secondary resistance value which is lower than the primary resistance value.

REFERENCES:
patent: 3808041 (1974-04-01), Rosenberger et al.
patent: 3926747 (1975-12-01), Newby et al.
patent: 4121241 (1978-10-01), Drake et al.
patent: 4755480 (1988-07-01), Yau et al.
patent: 4872050 (1989-10-01), Okamoto et al.
patent: 5049975 (1991-09-01), Ajika et al.

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