Method and system for eliminating cross-talk in thin film transi

Details Method and system for eliminating cross-talk in thin film transi Method and system for eliminating cross-talk in thin film transi

1988-12-22

1989-10-10

Moore, David K.

Communications: electrical

Land vehicle alarms or indicators

Internal alarm or indicator responsive to a condition of the...

340805, 340812, G09G 336

Patent

active

048735167

ABSTRACT:
In a liquid crystal display, and more particularly, in a thin film transistor matrix addressed liquid crystal display, a method and means are provided for assuring the presence of a constant RMS voltage waveform on the data lines. This eliminates uncertainty in the voltage levels on a pixel element caused by parasitic capacitance effects between the data lines and the pixel electrodes. The present invention is also particularly applicable to both binary level and gray scale level devices. Means for carrying out the present method are illustrated in both analog and digital form.

REFERENCES:
patent: 4485380 (1984-11-01), Soneda et al.
patent: 4638310 (1987-01-01), Hyliffe
patent: 4705345 (1987-11-01), Ayliffe et al.
patent: 4714921 (1987-12-01), Kanno et al.
"Silicon TFTs for Flat Panel Displays", by F. Morin and M. LeContellec, Hewlett Packard Journal, (date unknown).
"Amorphous-Silicon Thin-Film Metal-Oxide-Semiconductor Transistors", by Hiroshi Hayama and Masakiyo Matsumura, Applied Physics Letters, vol. 36, No. 9 (May 1980).
"Amorphous Silicon-Silicon Nitride Thin-Film Transistors" by M. J. Powel et al., Applied Physics Letters, vol. 38, No. 10 (May 1981).
"Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels" by A. J. Snell et al., Applied Physics, vol. 24, pp. 357-362 (1981).
"A TFT-Addressed Liquid Crystal Color Display" by M. Sugata et al. (Oct. 1983), Proceedings of the Third International Display Research Conference, Paper No. 53.
"Amorphous-Silicon TFT Array for LCD Addressing" by M. V. C. Stroomer, Electronic Letters, vol. 18, No. 20 (1982).
"High Resolution Transparent-Type a-Si TFT LDCs" by K. Suzuki et al., SID Digest, (1983).
"Promise and Challenge of Thin-Film Silicon Approaches to Active Matrices" by A. I. Kakatos, 1982 International Display Research Conference, IEEE, pp. 146-151.
"Application of Amorphous Silicon Field Effect Transistors in Integrated Circuits" by A. J. Snell et al., Applied Physics, vol. A26, pp. 83-86.
den Boer, W., "Determination of Midgap Density of States in a Si:H Using Space-Charge-Limited Current Measurements", Journal of Physics, Paris, vol. 42, C4, pp. 451-458.
Mackenzie, K. D. et al., "The Density of States in Amorphous Silicon Determined by Space-Charge-Limited Current Measurements", Philosophical Magazine B, vol. 46, No. 4, pp. 377-389, (1982).
Street, R. A. et al., "Effects of Doping on Transport and Deep Trapping in Hydrogenerated Amorphous Silicon", Applied Physics Letters, vol. 43, pp. 672-674 (Oct. 1983).
Sze, S. M., "Physics of Semiconductor Devices", 1st Edition, Wiley Interscience, p. 276, 1969.
Snell, A. J. et al., "Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels", Applied Physics, vol. 24, pp. 357-362 (1981).
Tuan, H. C. et al., "Dual-Gate a Si:H Thin Film Transistors", IEEE Electron Device Letters, vol. EDL-3(12), pp. 357-359 (1982).

Affiliated with

Also associated with

Rating

Method and system for eliminating cross-talk in thin film transi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for eliminating cross-talk in thin film transi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for eliminating cross-talk in thin film transi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1959931