Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1993-03-08
1998-05-26
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438721, 438737, H01L 2130
Patent
active
057564019
ABSTRACT:
There is provided a process of dry etching of a double-layer film composed of a polycrystal silicon film and a metal silicide film formed on a base substance with an etching-proof film composed of an inorganic compound as a mask in a state that reaction gas loaded with at least any one of HBr gas, Br.sub.2 gas and BBr.sub.3 gas is activated by plasma discharge, and the temperature of the base substance is maintained at 60.degree. C. or higher. With this, it is possible to aim at improvement of dimensional controllability and selectivity of etching without using flon gas, and further to arrange so that the configuration after etching of an object to be etched does not depend on an area ratio on a wafer of the area of a region where an etching-proof film is formed to the exposed area of the object to be etched.
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patent: 5118387 (1992-06-01), Kadomura
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"Etch Rate For Tungsten-Comprises Spin On-Glass-Material For High Etch Rate Ratio To Boron-Phosphorus-Silicon Glass", Anonymous; RD-291014; Jul. 10, 1988.
Breneman R. Bruce
Fujitsu Limited
Goudreau George
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