Method for fabricating a schottky junction

Details Method for fabricating a schottky junction Method for fabricating a schottky junction

1994-01-21

1996-03-19

Quach, T. N.

Fishing, trapping, and vermin destroying

437937, 437946, 1566431, 134 12, 148DIG17, H01L 2128

Patent

active

055003931

ABSTRACT:
The characteristics of a Schottky junction between diamond and metal causes the diode using the Schottky junction to have a large leakage reverse current and n-value far bigger than 1. A surface of diamond on which a Schottky junction shall be formed is pretreated by oxygen plasma or halogen plasma. The oxygen plasma or hydrogen plasma improves the surface state of the diamond by decoupling the surface C--C bonds and endowing the resulting extra bonds with hydrogen atoms, normalizing the superlattice structure at the surface. Pretreatment of the diamond by the oxygen or halogen plasma improves the diode properties; decreasing reverse current, increasing forward current and decreasing the n-value nearer to 1.

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