Method for making a semiconductor device including diffusion con

Details Method for making a semiconductor device including diffusion con Method for making a semiconductor device including diffusion con

1994-08-09

1996-03-19

Fourson, George

Fishing, trapping, and vermin destroying

437106, 437987, 437 40, H01L 29161

Patent

active

055003915

ABSTRACT:
A process for making a MOS device on a silicon substrate includes the step of forming a buried layer of germanium-silicon alloy in the substrate, or, alternatively, a buried layer of silicon enclosed between thin, germanium-rich layers. This buried layer is doped with boron, and tends to confine the boron during annealing and oxidation steps. The process includes a step of exposing the substrate to an oxidizing atmosphere such that an oxide layer 10 .ANG.-500 .ANG. thick is grown on the substrate.

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