Method for fabricating a CCD image sensor with active transistor

Fishing – trapping – and vermin destroying

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437 3, 437 49, H01L 2104, H01L 21265

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active

055003834

ABSTRACT:
An image sensor element having at least one charge storage well 70 and 80, charge transfer structures for transferring charge from one charge storage well 70 to another charge storage well 80, and a charge sensor for sensing charge levels in a charge storage well 70 without removing the charge from the well. Other devices, systems and methods are also disclosed.

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Jaroslav Hynecek, "Virtual Phase Technology; A New Approach To Fabrication Of Large Area CCDS", IEEE Transactions on Electron Devices, vol. ED-28, No. 5, May 1981, pp. 483-489.
Jaroslav Hynecek, "BCMD-AN Improved Photosite Structure For High Density Image Sensors", IEEE Transactions on Electron Devices, vol. 38, No. 5, May 1991, pp. 1011-1020.

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