Process for making a mesa GaInAsP/InP distributed feedback laser

Details Process for making a mesa GaInAsP/InP distributed feedback laser Process for making a mesa GaInAsP/InP distributed feedback laser

1987-09-01

1988-10-11

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG65, 148DIG95, 148DIG72, 156647, 156649, 156655, 437130, 437133, 437958, 437981, 357 56, 357 17, H01L 21208

Patent

active

047771488

ABSTRACT:
A distributed feedback (DFB) type laser and a method and apparatus for forming same wherein a quaternary semiconductor active lasing strip of material is buried between a substrate of binary compound of one type conductivity material and a mesa binary compound body of opposite type conductivity and a periodic grating structure is etched into the plateau of the mesa. In one embodiment, ohmic contacts are provided on either side of the grating structure and the mesa is undercut adjacent the active strip to partly isolate the ohmic contacts from the homojunction formed when the active strip is buried, preferably using a mass-transport process. In another embodiment, the ohmic contacts are formed on the top of a deeply etched grating structure. A buried layer double heterostructure (DH) laser is also described with DFB grating formed on the side walls of the layer. Additionally, a surface emitting diode laser with DFB is described.

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