Thin-film EL device

Details Thin-film EL device Thin-film EL device

1987-09-30

1988-10-11

Swisher, Nancy A. B.

Stock material or miscellaneous articles

Composite

Of inorganic material

428691, 428917, 313503, 313509, H05B 3312

Patent

active

047770996

ABSTRACT:
A thin-film electroluminescence device comprises a plate-like transparent electrode formed on a transparent substrate. A first insulating layer is formed on the transparent electrode. A second insulating layer is mounted on an electroluminescent layer made of ZnS:Mn and formed on the first insulating layer. A plate-like back electrode is provided on the second insulating layer. The first and second insulating layers are each made of gadolinium oxide of a purity level of over 99.9% and have a thickness of 0.05 to 0.8 .mu.m.

REFERENCES:
patent: 3274024 (1966-09-01), Hill et al.
patent: 4405691 (1983-09-01), Yale
patent: 4431922 (1984-02-01), Patten
patent: 4499159 (1985-02-01), Brines et al.
IEEE Transactions on Electron Devices, vol. ED-31, No. 1, Jan. 1984 "Choice of Dielectrics for TFEL Displays".
Japanese Journal of Applied Physics, vol. 21, No. 7, Jul., 1982, pp. 1028-1031 "TFEL Device Employing TA.sub.2 O.sub.5 Insulator".

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