Semiconductor multiquantum well structure and semiconductor lase

Details Semiconductor multiquantum well structure and semiconductor lase Semiconductor multiquantum well structure and semiconductor lase

1994-03-11

1996-09-03

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

257 17, H01S 318

Patent

active

055530907

ABSTRACT:
A semiconductor multiquantum well structure is provided, which includes semiconductor well layers for forming quantum wells and semiconductor barrier layers for forming potential barriers each of which is arranged between adjacent two of the well layers. Each barrier layer is 7 nm or less in thickness. A number of the well layers is selected dependent upon the thickness of each barrier layer so that carriers or electrons and holes are injected into the respective quantum wells substantially uniformly. The number of the well layers is preferably 5 or more, and in the case, each barrier layer preferably ranges from 5 nm to 7 nm in thickness. A semiconductor laser having superior distortion characteristics at a high-frequency band such as 1 GHz can be provided.

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"Ultralow Chirp and High-Speed 1.55 .mu.m Multiquantum Well .lambda./4-Shifted DFB Lasers", IEEE Photonics Technology Letters, vol. 2, No. 4, Apr. 1990, pp. 229-230, by K. UOMI et al.
Papers of the 1989 IEICE Spring Conference, pp. 4-172 Semiconductor Laser Conference. (No Month).

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