Thin film transistor having metallic light shield

Details Thin film transistor having metallic light shield Thin film transistor having metallic light shield

1992-12-07

1996-09-03

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 53, 257 72, 257659, H01L 310232, H01L 2904, H01L 31036, H01L 23552

Patent

active

055526306

ABSTRACT:
A thin film transistor includes an insulating substrate, a gate electrode formed on the substrate, a first insulating layer formed on the gate electrode, a semiconductor layer formed on the first insulating layer over the gate electrode, a second insulating layer formed on the semiconductor layer over the gate electrode, a drain electrode having a predetermined width formed on the semiconductor layer and overlapping a side portion of the second insulating layer, a source electrode formed on the semiconductor layer opposing the drain electrode and overlapping another side portion of the second insulating layer, a third insulating layer formed on the source and the drain electrodes width, and a metallic layer formed on the third insulating layer having a width greater than the predetermined width and covering a predetermined length of the drain electrode.

REFERENCES:
patent: 4618873 (1986-10-01), Sasano et al.
patent: 4646424 (1987-03-01), Parks et al.
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4984033 (1991-01-01), Ishizu et al.
patent: 4990981 (1991-02-01), Tanaka et al.
patent: 5041888 (1991-08-01), Possin et al.
patent: 5136358 (1992-08-01), Sakai et al.
patent: 5160835 (1992-11-01), Yagyu

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