Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1994-04-22
1996-09-03
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257 50, 257753, 257764, H01L 2900
Patent
active
055526276
ABSTRACT:
An antifuse may be fabricated as a part of an integrated circuit in a layer located above and insulated from the semiconductor substrate. The antifuse includes a lower first metal electrode, a first antifuse dielectric layer, preferably silicon nitride, disposed on the lower first electrode and an antifuse layer, preferably amorphous silicon, disposed on the first dielectric layer. An inter-layer dielectric layer is disposed on the antifuse layer and includes an antifuse via formed completely therethrough. A second antifuse dielectric layer, preferably silicon nitride, is disposed over the amorphous silicon layer in the antifuse via, and an upper second metal electrode is disposed over the second dielectric layer in the antifuse via.
REFERENCES:
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4424578 (1984-01-01), Miyamoto
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4800176 (1989-01-01), Kakumu et al.
patent: 4882611 (1989-11-01), Blech et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4949084 (1990-08-01), Schwartz et al.
patent: 5093711 (1992-03-01), Hirakawa
patent: 5100827 (1992-03-01), Lytle
patent: 5110754 (1992-05-01), Lowrey et al.
patent: 5134457 (1992-07-01), Hamdy et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5171715 (1992-12-01), Husher et al.
patent: 5181096 (1993-01-01), Forouhi
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5242851 (1993-09-01), Choi
patent: 5270251 (1993-12-01), Cohen
patent: 5272101 (1993-12-01), Forouhi et al.
patent: 5290734 (1994-03-01), Boardman et al.
patent: 5300456 (1994-04-01), Tigelaar et al.
G. H. Chapman et al., "A Laser Linking Process for Restructurable VLSI", CLEO '82 (Apr. 1982) 5 pages.
T. C. Penn "New Methods for Processing Silicon Slices", Science, vol. 208 (May 1980) pp. 923-6.
Burns, G. P. "Titanium dioxide dielectric films formed by rapid thermal oxidation" 1989, Journal of Applied Sciences, pp. 2095-2097.
Pauleau, Y. "Interconnect Materials for VLSI Circuits", Apr. 1987, Solid State Technology, pp. 155-162.
Eltoukhy Abdelshafy A.
Forouhi Abdul R.
McCollum John L.
Actel Corporation
Carroll J.
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