Solid-state imaging device and method of manufacturing the same

Details Solid-state imaging device and method of manufacturing the same Solid-state imaging device and method of manufacturing the same

1997-10-16

1999-02-09

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, H01L 27148, H01L 27768

Patent

active

058698540

ABSTRACT:
A solid-state imaging device provided here comprises a p-type semiconductor substrate, a p-type impurity layer formed thereon, a light-intercepting part formed inside said impurity layer for storing signal charges produced through incident light, and a n-type drain part formed in a region of the substrate excluding the light-intercepting part for discharging excess charges of the light-intercepting part. As a result, sensitivity characteristics on the long wavelength side can be improved, and miniaturization can be facilitated. An n-type buried drain part for discharging charges is formed under a transfer part via a p-type impurity layer. The readout side between the light-intercepting part and the transfer part is separated by a p-type readout control part which is installed to control threshold voltage (Vt), and the non-readout side is separated by a channel stopper. An insulating film is formed on the light-intercepting part and on the transfer part, and charges of the light-intercepting part are read out to the transfer part by the conductive-type electrode. For preventing dark current from arising, a p-type buried diffusion layer is formed at the interface of the light-intercepting part and the insulating film.

REFERENCES:
patent: 4467341 (1984-08-01), Suzuki
patent: 4717945 (1988-01-01), Yusa et al.
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4916501 (1990-04-01), Thenoz et al.
patent: 5233429 (1993-08-01), Jung
"Solid-State Imagining Device and Applied Technology for Cameras Thereof", Torikeeps Co., Ltd., Sep. 30, 1988, p. 28, line 7 through p. 29, line 29.

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