Method of forming polycrystalline silicon layer on substrate and

Details Method of forming polycrystalline silicon layer on substrate and Method of forming polycrystalline silicon layer on substrate and

1995-06-05

1999-02-09

Mills, Gregory L.

Electric heating

Metal heating

By arc

21912174, 21912175, 21912186, 21912181, B23K 2606, B23K 2612

Patent

active

058698035

ABSTRACT:
A method of forming a polycrystalline silicon thin film includes irradiating an amorphous silicon layer with laser light of an excimer laser energy density of 100 mJ/cm.sup.2 to 500 mJ/cm.sup.2, preferably 280 mJ/cm.sup.2 to 330 mJ/cm.sup.2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J. The laser device includes an homogenizer movably mounted at the end of the optical path of the laser beam.

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