Semiconductor device with glass layer contacting outer periphery

Details Semiconductor device with glass layer contacting outer periphery Semiconductor device with glass layer contacting outer periphery

1980-12-23

1983-08-23

Clawson, Jr., Joseph E.

357 52, 357 73, H01L 2934

Patent

active

044007167

ABSTRACT:
A semiconductor device with a planar p-n junction and a guard ring region, wherein an oxide film is covered on the surface between the p-n junction and the guard ring, and a glass film is formed on the surface surrounding the guard ring region.

REFERENCES:
patent: 3643136 (1972-02-01), Tuft
patent: 3760242 (1973-09-01), Duffy et al.
J. White, "Structure Capable of Withstanding High Reverse Energy," RCA Tech. Notes, #1239, May 5, 1980.

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