Method for producing a contact hole in a semiconductor device us

Fishing – trapping – and vermin destroying

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437 28, 437 41, 437247, 437982, H01L 2128

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active

055523420

ABSTRACT:
An LOCOS film is formed on an Si substrate, a gate oxide film and a gate electrode are formed thereon, and source/drain impurities are ion implanted into the Si substrate using the gate electrode as a mask. Then, a BPSG film is formed at a film density of 1.8 g/cm.sup.3 or more. A recessed part is formed in the BPSG film by the first photolithographic process with an etching depth of 20% or more but under 100% of the thickness of the BPSG film. Thereafter, the BPSG film is fluidized by reflow treatment to shape a part which is to be a contact hole into a funnel with an "upwards convex" curvature. Finally, the part formed into the funnel is etched to make a contact hole. As a result, wiring disconnection within the contact hole can be prevented, the diffusion depth controllability for the source/drain impurities can be improved, and the fall in the impurity density in the source/drain surface can be prevented.

REFERENCES:
patent: 4495220 (1985-01-01), Wolf et al.
patent: 4948743 (1990-08-01), Ozoki
patent: 5166088 (1992-11-01), Veda et al.
patent: 5166101 (1992-11-01), Lee et al.

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