Method for forming contact hole of semiconductor device

Details Method for forming contact hole of semiconductor device Method for forming contact hole of semiconductor device

1997-04-25

1999-02-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 38, 216 46, 216 67, 438743, H01L 2100

Patent

active

058694048

ABSTRACT:
A method for forming a contact hole of semiconductor device is disclosed and comprises forming a word line and a first internal insulating film on a semiconductor substrate, forming an insulating film spacer at the side wall of the word line and the first internal insulating film, forming a nitride film as a second internal insulating film at a predetermined thickness on the resultant structure, forming a planarization layer on the second internal insulating film, etching the planarization layer in an atmosphere comprising C.sub.4 F.sub.8 gas, Ar gas and a hydrogen-containing gas in the presence of a contact mask, to create a contact hole through which the second internal insulating film is exposed. The hydrogen-containing gas acts to generate C--H type polymers weaker in bond strength but at a larger amount than C--C type polymers, thereby preventing the etching stop phenomenon as well as the underlying layer damage caused by overetch during the etching process of a contact hole. This allows the contact hole to be formed without increasing junction leakage current, resulting in a significant improvement in the reliability and the high integration of a semiconductor device.

REFERENCES:
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5110408 (1992-05-01), Fujii et al.
patent: 5294294 (1994-03-01), Namose
patent: 5405491 (1995-04-01), Shahvandi et al.
patent: 5700349 (1997-12-01), Tsukamoto et al.

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