Method of manufacturing an amplifying solid-state imaging device

Details Method of manufacturing an amplifying solid-state imaging device Method of manufacturing an amplifying solid-state imaging device

1997-09-10

1999-02-09

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438 73, 438 78, H01L 3118

Patent

active

058693521

ABSTRACT:
In an amplifying type solid-state imaging device having a pixel MOS transistor, the occurrence of blooming can be suppressed and an amount of signal charges can be increased. A second conductivity-type overflow-barrier region (23) and a first conductivity-type semiconductor region (24) are sequentially formed on a first conductivity-type semiconductor substrate (22). A pixel MOS transistor (29) comprising a source region (27), a drain region (28) and a gate portion (26) is formed on the first conductivity-type semiconductor region (24), and a second conductivity-type channel stopper region (41) for signal charges accumulated in the first conductivity-type semiconductor region (24) of the gate portion (26) is formed within the first conductivity-type semiconductor region (24) formed just below the drain region (28).

REFERENCES:
patent: 5506434 (1996-04-01), Yonemoto

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