Semiconductor device

Details Semiconductor device Semiconductor device

1984-05-11

1986-08-12

Edlow, Martin H.

357 232, 357 2312, 357 16, H01L 2980

Patent

active

046059458

ABSTRACT:
In a semiconductor device having at least a first semiconductor layer and a second semiconductor layer which are arranged so as to form a heterojunction, an edge of a conduction band of the first semiconductor layer being positioned lower in energy than an edge of a conduction band of the second semiconductor layer in the vicinity of the heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers induced in the vicinity of the heterojunction; a semiconductor device characterized in that a low impurity concentration region is comprised in at least the part of the first semiconductor layer between the pair of electrodes, that a region adjoining each of the pair of electrodes is a high impurity concentration region, and that at least one layer containing an impurity which has a conductivity type identical or opposite to that of an impurity contained in the aforementioned regions is comprised in the first semiconductor layer.

REFERENCES:
patent: 4424525 (1984-01-01), Mimura
Lee et al, Proceed IEEE/Cornell Conf. High Speed Semiconductor Devices & Circuits, Aug. 15-17, 1983, Ithica, N.Y.
Hikosaka et al, JAP Journ. Appl. Phys., vol. 20, No. 11, Nov. 1981.

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