Dual gate FET oscillator mixer

Oscillators – With distributed parameter resonator

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Details

331117FE, 331117D, 455325, 455333, H03B 518

Patent

active

046059091

ABSTRACT:
An oscillator-mixer arrangement including a dual-gate field effect transistor of the Schottky type for supplying an intermediate frequency output signal. The output signal is obtained by subtractively mixing a high frequency input signal and a signal produced in the arrangement. The input signal is applied to the first gate electrode (G.sub.1), the produced signal is controlled by the second gate electrode (G.sub.2), and the output signal is recovered at the drain electrode (D), while the source electrode (S) is directly connected to ground. A micro-strip line having a characteristic impedance Z.sub.O which is electromagnetically coupled to a dielectric resonator and loaded by an impedance (Z.sub.O) is connected to the second gate electrode (G.sub.2). The arrangement is intended to be included in a receiver front end assembly for very high frequency waves, typically of a frequency of 12 GHz, used for broadcasting radio-television programs by artificial satellites.

REFERENCES:
patent: 4112373 (1978-09-01), Miyamoto et al.
patent: 4563772 (1986-01-01), Beneking et al.
Podcameni, A. et al., "Stabilized FET Oscillator with Input Dielectric Resonator: Large Signal Design" Electronics Letters, Jan. 8, '81, vol. 17, No. 1, pp. 44-45.
Tsironis, C. et al., "A Self-Oscillating Dual Gate MESFET X-Band Mixer with 12 DB Conversion Gain" Proc. 8th European Microwave Conference, Brighton, 1979, pp. 321-325.
Tsironis, C., "12 GHz Receiver with Self-Oscillating Dual-Gate MESFET Mixer" Electronics Letters, vol. 17, #17 (Aug. 20, 1981) pp. 617-618.
Stahlmann, R. et al. "Dual-Gate MESFET Self-Oscillating X-Band Mixers" Electronics Letters, vol. 15, #17 (Aug. 16, 1979) pp. 524-526.

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