Method of making layered semiconductor laser

Details Method of making layered semiconductor laser Method of making layered semiconductor laser

1981-12-18

1983-08-23

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192C, 29583, 357 20, 372 43, 372 44, C23C 1500

Patent

active

044002564

ABSTRACT:
A method for making a thin film layered semiconductor laser which includes depositing layers of semiconductor and electrical lead materials on an undoped semiconductor substrate and heating each layer of the semiconductor material after it has been deposited to improve crystallinity of the deposited semiconductor material and to improve interfaced continuity of the material at the lasing interface and at the electrical conductor to semiconductor interface, and after the desired number of layers of semiconductor and electrical lead materials have been deposited, cutting and polishing the ends of the laser device and finally placing a non-conductive dielectric reflecting surface on one of the polished end surfaces of the laser.

REFERENCES:
patent: 3359508 (1967-12-01), Hall
patent: 3939052 (1976-02-01), Riley
patent: 4140610 (1979-02-01), Morimoto
patent: 4152535 (1979-02-01), Deminet et al.

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