Surface processing device

Details Surface processing device Surface processing device

1996-09-06

1999-02-09

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723ME, 156345, C23C 1600

Patent

active

058688498

ABSTRACT:
A surface processing device includes: a first gas supplying passage disposed near a surface of a wafer for supplying TEOS insusceptible to heating by microwave; a second gas supplying passage disposed near the wafer surface for supplying H.sub.2 O susceptible to heating by microwave; and a microwave generating unit disposed near the wafer surface for irradiating TEOS supplied from the first supplying passage and H.sub.2 O gas supplied from the second gas supplying passage with microwave and selectively heating only H.sub.2 O so that TEOS reacts with H.sub.2 O to form an SiO.sub.2 film on the wafer surface. Thus, a surface processing device capable of precisely controlling CVD reaction and thus forming a thin film having good step coverage is provided. A method of processing surfaces is also provided.

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