Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1996-06-06

1999-02-09

Geist, Gary

Coating apparatus

Gas or vapor deposition

With treating means

156345, 20429832, 20429834, 31511121, C23C 1600, C23C 1400, B28B 102, H01J 724

Patent

active

058688480

ABSTRACT:
Disclosed is an etching apparatus for etching wafer W held on an electrostatic chuck 11 by using a plasma generated in a space between an upper electrode 21 and a susceptor 5 in a processing chamber 2. The plasma is generated by supplying a high frequency power from a high frequency power supply 43 via a power supply line 42. The etching apparatus includes a measuring electrode 18 made of silicon, attached to a focus-ring 17 provided around wafer W. The measuring electrode 18 can be electrically connected to a susceptor 5. A lead wire 44 is used, an end of which is connected to the power supply bar 42 and the other end of which is connected to a voltage indicator 46 for monitoring V.sub.DC via an RF filter 45. The V.sub.DC level having a constant correlation with the V.sub.DC generated on wafer W, can be detected through monitoring by the voltage indicator 46.

REFERENCES:
patent: 4333814 (1982-06-01), Kuyel
patent: 4602981 (1986-07-01), Chen et al.
patent: 5275683 (1994-01-01), Arami et al.
patent: 5665166 (1997-09-01), Deguchi et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1945742