Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1997-06-16
1999-02-09
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 89, 117 93, C30B 2500
Patent
active
058688340
ABSTRACT:
The disclosure describes a method of manufacturing a Group II-VI compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of Group II element and a hydride or an organic metal compound of Group VI element as the raw material, which comprises repeating alternate introduction of an organic metal compound of Group II element and a halide gas, a halogen gas or a mixture thereof; or adding a halide gas, a halogen gas or a mixture thereof to a gas for vapor-phase epitaxy.
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Fujimori Toshinari
Goto Hideki
Shimoyama Kenji
Conlin David G.
Corless Peter F.
Garrett Felisa
Mitsubishi Kasei Corporation
O'Day Christine C.
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