Method of producing silicon single crystal thin film

Details Method of producing silicon single crystal thin film Method of producing silicon single crystal thin film

1997-02-19

1999-02-09

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

90 93, 90 97, C30B 2502

Patent

active

058688331

ABSTRACT:
A method of producing a silicon single crystal thin film having a smooth surface in a stable manner in vapor-phase growth. A silicon single crystal thin film is grown by mixing silicon chloride raw material with hydrogen gas to form a process gas and supplying the process gas to a semiconductor single crystal substrate at a growth temperature, wherein the thin film is grown at a growth rate equal to or higher than 80% of the maximum growth rate at the growth temperature.

REFERENCES:
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patent: 3341374 (1967-09-01), Sirtl
patent: 3945864 (1976-03-01), Goldsmith et al.
H. Habuka et al., "Numerical Evaluation of Silicon-Thin Film Growth from SiHCl.sub.3 -H.sub.2 Gas Mixture in a Horizontal Chemical Vapor Deposition Reactor", Japanese Journal of Applied Physics, vol. 33, No. 4A, Apr. 1994, pp. 1977-1985.
H. Habuka et al., "Modeling of Expitaxial Silicon Thin-Film Growth on a Rotating Substrate in a Horizontal Single-Wafer Reactor", Journal of the Electrochemical Society, vol. 142, No. 12, Dec. 1, 1995, pp. 4272-4278.

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