Semiconductor device including inversion preventing layers havin

Details Semiconductor device including inversion preventing layers havin Semiconductor device including inversion preventing layers havin

1991-08-13

1993-06-08

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

With pn junction isolation

257370, 257552, 257593, H01L 2702, H01L 2704, H01L 2712

Patent

active

052182240

ABSTRACT:
Buried layers of a second conductivity type are formed in a plurality of portions of a surface region of a semiconductor substrate of a first conductivity type, and an epitaxial layer of the first conductivity type is formed on the buried layers and the semiconductor substrate. A plurality of well regions of the second conductivity type are formed in the epitaxial layer in contact with the buried layers, and a region of the second conductivity type with a high impurity concentration is formed in one of the well regions in contact with the buried layers. A field insulating layer is formed on a surface region of the semiconductor substrate between the well regions. An impurity is ion-implanted in a portion substantially immediately below the field insulating film a plurality of times to form inversion preventing layers of the first conductivity type having a plurality of impurity concentration peaks. Active elements are formed in the epitaxial layer of the first conductivity type and the well regions.

REFERENCES:
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4589004 (1986-05-01), Yasuda et al.
patent: 4879584 (1989-11-01), Takagi et al.
patent: 4921811 (1990-05-01), Watanabe et al.
"Silicon Processing for the VLSI Era--vol 2", S. Wolf, Circuit-Layout . . . , pp. 416-419, 1990.
"VLSI Technology", Sze, pp. 487-490, 1988.

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