Laser diode with thermal conducting, current confining film

Oscillators – Molecular or particle resonant type

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357 15, 357 18, H01S 319

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active

041829956

ABSTRACT:
A laser diode formed of a rectangular parallelopiped body of single crystalline semiconductor material includes regions of opposite conductivity type indium phosphide extending to opposite surfaces of the body. Within the body is a PN junction at which light can be generated. A stripe of a conductive material is on the surface of the body to which the P type region extends and forms an ohmic contact with the P type region. The stripe is spaced from the side surfaces of the body and extends to the end surfaces of the body. A film of germanium is on the portions of the surface of the P type region which is not covered by the conductive stripe. The germanium film serves to conduct heat from the body and forms a blocking junction with the P type region so as to confine the current through the body, across the light generating PN junction, away from the side surfaces of the body.

REFERENCES:
patent: 3234057 (1966-02-01), Anderson
patent: 3723903 (1973-03-01), Paoli et al.
patent: 3982261 (1976-09-01), Antypas
J. J. Hsieh, et al., "Room-Temperature CW Operation of GaInAsP/InP Double Heterostructure Diode Lasers Emitting a 1.1 .mu.m," App. Phys. Let., vol. 28, No. 12, Jun. 15, 1976, pp. 709-711.
K. Itoh et al., "New Heteroisolation Stripe-Geometry Visible-Light-Emitting Lasers," IEEE J. of Quantum Electronics, vol. QE 11, No. 7, Jul. 1975, pp. 421-426.

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