Semiconductor memory of xN type having error correcting circuit

Details Semiconductor memory of xN type having error correcting circuit Semiconductor memory of xN type having error correcting circuit

1996-01-19

1997-09-23

Beausoliel, Jr., Robert W.

Excavating

G11C 2900

Patent

active

056712391

ABSTRACT:
A memory device for storing data of a multi-bit structure in a plurality of memory cell blocks has a parity cell block having the same structure as the memory cell block. If read data contains an error bit, this error bit is corrected by an EOR calculation of correct bits and a parity bit. The address of an error bit is written in a defective cell memory made of fuses for example. In the case of a flash memory, a parity calculation and a parity data write operation are performed at the same time when data is written.

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