Nonvolatile semiconductor memory device

Details Nonvolatile semiconductor memory device Nonvolatile semiconductor memory device

1994-04-11

1995-02-21

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365 63, 365 72, 36523003, 365242, G11C 1140

Patent

active

053922387

ABSTRACT:
A semiconductor nonvolatile memory device according to the invention comprises a first cell block having with a current path and a plurality of memory cells, a second cell block having with a current path and a plurality of memory cells, the current path of the second cell block has an end connected to a corresponding end of the current path of the first cell block, a first line electrically connected to the other end of the current path of the first cell block, and a second line electrically connected to the other end of the current path of the second cell block. The first and second lines are made to operate a bit line and a source line, or vise versa, depending on which one of said cell blocks is selected for data retrieval.

REFERENCES:
patent: 5197027 (1993-03-01), Chalia
patent: 5293337 (1994-03-01), Aritome et al.
patent: 5295096 (1994-03-01), Nakajima
patent: 5299166 (1994-03-01), Suh et al.

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