Integrated circuit employing insulated gate electrostatic induct

Details Integrated circuit employing insulated gate electrostatic induct Integrated circuit employing insulated gate electrostatic induct

1983-06-29

1987-02-17

Edlow, Martin H.

357 234, 357 2312, 357 236, 357 231, 357 44, 357 41, H01L 2978, H01L 2702

Patent

active

046443860

ABSTRACT:
An insulated gate electrostatic induction transistor and an integrated circuit employing such an insulating gate electrostatic induction transistor as a drive transistor. A highly resistive channel region is provided on a semiconductor substrate of higher conductivity. A highly doped source region is formed adjacent the channel region, and a gate electrode, separated from the channel region by a thin insulating layer, is formed above the channel region. The gate electrode has a high diffusion potential with respect to the source region. The depth of the highly doped source region is less than that of a distribution of carriers in an inversion layer formed under the gate electrode.

REFERENCES:
patent: 3653978 (1972-04-01), Robinson et al.
patent: 4334235 (1982-06-01), Nishizawa
Schottky MOSFET for VLSI, Koeneke et al., IEDM 1981 pp. 367-370.

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