Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1996-01-03
1997-09-23
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257593, H01L 29201
Patent
active
056708017
ABSTRACT:
A method of fabricating a semiconductor device includes producing a collector layer, a base layer, and an emitter layer on a semiconductor substrate; producing a dummy emitter electrode on a region of the emitter layer; forming a first resist except where the dummy emitter electrode is present; completely removing the dummy emitter electrode to expose the surface of the emitter layer; depositing an emitter electrode material on the first resist and the emitter layer that is exposed by the removal of the dummy emitter electrode; forming a mask on a region of the emitter electrode material film where an emitter electrode is later produced; and etching the emitter electrode material film using the mask; and removing the first resist, thereby producing an emitter electrode layer, a peripheral side part extending upward from the bottom part, and an upper fringe part protruding outward from the peripheral side part perpendicular to the peripheral side part. A minute emitter electrode is produced without employing vacuum evaporation and lift-off techniques that can cause burrs on the emitter electrode. Since a refractory metal can be employed as the emitter electrode material, a highly-reliable emitter electrode is produced with high stability.
REFERENCES:
patent: 4611388 (1986-09-01), Pande
patent: 5268315 (1993-12-01), Prasad et al.
patent: 5411632 (1995-05-01), Delage et al.
patent: 5436497 (1995-07-01), Miyauchi et al.
Guay John F.
Jackson Jerome
Mitsubishi Denki & Kabushiki Kaisha
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