Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-12-08
1997-09-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257 22, 257 23, 257 96, 257 97, 372 45, 372 46, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
056707894
ABSTRACT:
A semiconductor light-emitting device that enables to realize a satisfactory carrier confinement effect to be capable of stable operation at room temperature. This device includes a QW layer and p- and n-barrier layers placed at each side of the QW layer. The QW layer has an energy level E.sub.va at the top of the valence band and an energy level E.sub.ca at the bottom of the conduction band. The p-barrier layer has an energy level E.sub.vpb at the top of the valence band and an energy level E.sub.cpb at the bottom of the conduction band. The n-barrier layer has an energy level E.sub.vnb at the top of the valence band and an energy level E.sub.cnb at the bottom of the conduction band. The energy levels E.sub.va, E.sub.vpb and E.sub.vnb at the top of the valence band satisfy the relationship of E.sub.va >E.sub.vpb >E.sub.vnb. The energy levels E.sub.ca, E.sub.cpb and E.sub.cnb at the bottom of the conduction band satisfy the relationship of E.sub.va <E.sub.vnb <E.sub.vpb. Electrons injected into the QW layer through the n-barrier layer and holes injected into the QW layer through the p-barrier layer are recombined with each other to emit light therefrom.
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NEC Corporation
Ngo Ngan V.
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