Method of fabricating a toothed-shape capacitor node in a semico

Details Method of fabricating a toothed-shape capacitor node in a semico Method of fabricating a toothed-shape capacitor node in a semico

1997-01-30

1997-09-23

Tsai, Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 218242

Patent

active

056704070

ABSTRACT:
The present invention is a method of fabricating a toothed-shape capacitor node in a semiconductor DRAM circuit. This invention utilizes dot silicon as an etching mask. Next, the polysilicon is oxidized and removed to form trenches in the bottom storage of the capacitor. Thus, a toothed-shape capacitor node is formed in semiconductor circuit.

REFERENCES:
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5393373 (1995-02-01), Jun et al.
patent: 5622889 (1997-04-01), Yoo et al.

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