Method of making a tooth shaped capacitor using ion implantation

Details Method of making a tooth shaped capacitor using ion implantation Method of making a tooth shaped capacitor using ion implantation

1997-01-30

1997-09-23

Niebling, John

Fishing, trapping, and vermin destroying

437919, 437977, 148DIG138, H01L 2170

Patent

active

056704054

ABSTRACT:
A method of manufacturing a capacitor for use in semiconductor memories is disclosed herein. The present invention includes forming a silicon oxide layer as an etching mask to etch a polysilicon layer to form a bottom storage node of a capacitor. The silicon oxide layer is formed from the thermal annealing of oxygen doped dot silicon.

REFERENCES:
patent: 5134086 (1992-07-01), Ahn
patent: 5427974 (1995-06-01), Lue et al.
patent: 5464791 (1995-11-01), Hirota
patent: 5567637 (1996-10-01), Hirota

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