Method of making semiconductor device having thin film transisto

Details Method of making semiconductor device having thin film transisto Method of making semiconductor device having thin film transisto

1996-04-26

1997-09-23

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 41, 437 52, 437 57, 437915, 437978, 437982, H01L 218244, H01L 21473

Patent

active

056703902

ABSTRACT:
A thin film transistor is used as a load transistor in a memory cell in a SRAM. A load thin film transistor is arranged on an interlayer insulating layer on the surface of a silicon substrate. A silicon layer in which source/drain regions of the thin film transistor are formed is covered with an oxidation preventing film. An interlayer insulating layer which is to be subject to high temperature reflow processing is formed on the surface of the oxidation preventing film. The oxidation preventing film is formed of polycrystalline silicon, amorphous silicon, silicon nitride, or the like and formed on the silicon layer in the thin film transistor directly or through an insulating layer to cover the surface of the silicon layer.

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