Patent
1983-01-27
1984-08-21
Munson, Gene M.
357 30, 357 20, H01L 2978, H01L 2714, H01L 3100
Patent
active
044673418
ABSTRACT:
A charge trasfer imaging device is disclosed, which comprises photosensitive sites formed in and continuous to the surface of a semiconductor substrate for generating and storing signal charge in response to an incident light signal, a shift electrode for controlling the transfer of the signal charge through the semiconductor substrate, and a charge transfer shift register for reading out the signal charge by transferring the same from the shift electrode through transfer channels formed in and continuous to the semiconductor substrate surface. Semiconductor region of the opposite conductivity type to the semiconductor substrate is formed in the substrate other than a portion of the substrate below the photosensitive sites and at least under the transfer channels of the shift register, and a reverse bias voltage is applied between these semiconductor regions and the semiconductor substrate.
REFERENCES:
patent: 3896474 (1975-07-01), Amelio et al.
patent: 3896485 (1975-07-01), Early
patent: 4373167 (1983-02-01), Yamada
"CCD Linear Image Sensor With Buried Overflow Drain Structure," H. Goto et al., Electronics Letters, vol. 17, No. 24, pp. 904-905, (Nov. 26,1981).
Munson Gene M.
Tokyo Shibaura Denki Kabushiki Kaisha
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