Masks and methods of forming masks which avoid phase conflict pr

Details Masks and methods of forming masks which avoid phase conflict pr Masks and methods of forming masks which avoid phase conflict pr

1996-06-17

1997-09-23

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430314, G03F 900

Patent

active

056702817

ABSTRACT:
Masks and methods of forming the masks for avoiding phase conflict problems in phase shifting masks used to form a number of parallel line and space patterns on a semiconductor wafer using positive photoresist. The mask uses phase shifting material between alternating pairs of parallel opaque lines. Opaque fine tips formed as extensions to the opaque parallel lines on the mask prevent phase conflict from causing bridging at the ends of the lines. The methods of forming the masks use part of the transparent substrate or an added layer as the phase shifting material.

REFERENCES:
patent: 5318868 (1994-06-01), Hasegawa et al.
patent: 5468578 (1995-11-01), Rolfson
"Phase-Shifting Mask Strategies: Isolated Dark Lines" by Marc D. Levenson, Microlithography World, Mar. 1992, pp. 6-12.
"Phase-Shifting Mask Strategies: Line-Space Pattern" by Marc D. Levenson Microlithography World, Sep 1992, pp. 6-12.

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