Forming thick dielectric at the bottoms of trenches utilized in

Details Forming thick dielectric at the bottoms of trenches utilized in Forming thick dielectric at the bottoms of trenches utilized in

1985-07-25

1987-02-17

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

C25D 1102

Patent

active

046438041

ABSTRACT:
Selective wet or plasma anodization is utilized for forming a relatively thick dielectric layer only at the bottoms of trenches included in DRAM and/or CMOS devices. In that way, the electrical characteristics of trenches that include bottoms having surface roughness and/or sharp or irregular corners are significantly improved. Additionally, electrically isolated capacitor structures in elongated trenches formed in DRAM devices are thereby made feasible.

REFERENCES:
patent: 4028149 (1977-06-01), Deines
patent: 4104090 (1978-08-01), Pogge
patent: 4459181 (1984-07-01), Benjamin
IEEE Transactions on Electron Device, vol. ED-27, No. 8, "Selective Anodic Oxidation of Silicon in Oxygen Plasma", by V. Q. Ho et al, pp. 1436-1443, Aug. 1980.
IEEE Transactions on Electron Devices, vol. ED-32, No. 2, Feb. 1985, "Anodic Oxidation of Si in Oxygen/Chlorine Plasma", by N. Haneji et al, pp. 100-105.

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