Method of manufacturing a semiconductor device utilizing outdiff

Details Method of manufacturing a semiconductor device utilizing outdiff Method of manufacturing a semiconductor device utilizing outdiff

Filed on

1981-04-24

Date issued

1984-08-21

Examiner

Saba, W. G.

Patent Class

Metal working

SubClass

Method of mechanical manufacture

SubSubClass

Assembling or joining

Other Related Categories

29576E, 29577C, 29578, 29580, 148 15, 148175, 148190, 148191, 357 22, 357 42, 357 44, 357 48, 357 89, 357 90, H01L 2120, H01L 21225

Type

Patent

Status

active

Patent number

044661711

Description

ABSTRACT:
A method of manufacturing a semiconductor device having two juxtaposed regions (12, 16) of opposite conductivity types which adjoin a surface and which together constitute a p-n junction (9) which is preferably perpendicular to the surface and the doping concentration of which decreases towards the surface. According to the invention n-type and p-type buried layers (2, 6) are provided beside each other on a semiconductor substrate (1) and on said layers a high-ohmic epitaxial layer (7) is grown. By heating, the dopants diffuse from the buried layers through the whole thickness of the epitaxial layer and into the substrate. With suitably chosen donor and acceptor atoms (for example boron and phosphorus in silicon) n and p-type regions (12, 16) are formed in the epitaxial layer and form a p-n junction (9) perpendicular to the surface by compensation of the lateral diffusions from the buried layers.

REFERENCES:
patent: 3793088 (1974-02-01), Eckton
patent: 3928091 (1975-12-01), Tachi et al.
patent: 4099998 (1978-07-01), Ferro et al.
patent: 4151010 (1979-04-01), Goth
patent: 4168997 (1979-09-01), Compton
patent: 4209795 (1980-06-01), Nonaka
patent: 4280272 (1981-07-01), Egawa et al.
patent: 4373253 (1983-02-01), Khadder et al.
Czorny, B., "Epitaxy-A Versatile Technology for Integrated Circuits", R.C.A. Engineer, vol. 13, No. 3, Oct.-Nov., 1967, pp. 28-33.

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