SOI wafer with sige

Details SOI wafer with sige SOI wafer with sige

1992-06-01

1993-06-08

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 56, 257197, 257347, 257191, 437101, 437 3, 437 5, 136258, 136261, H01L 4500

Patent

active

052182134

ABSTRACT:
An SOI wafer is formed having a silicon-germanium layer between the epitaxial layer of the device and the insulative layer. The process includes bonding a second substrate to a silicon-germanium layer on a first substrate by an intermediate insulative layer. The first substrate is removed down to the silicon-germanium layer and the silicon layer is epitaxially formed on the silicon-germanium layer.

REFERENCES:
patent: 4861393 (1989-08-01), Bean et al.
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4962051 (1990-10-01), Liaw
patent: 4975387 (1990-12-01), Prokes et al.
patent: 5006912 (1991-04-01), Smith et al.
patent: 5013681 (1991-05-01), Godbey et al.
Haisma et al., "Silicon-on-Insulator Wafer Bonding-Wafer Thinning, Technological Evaluations," Japanese J. Appl. Phys., vol. 28, No. 8, 1989, pp. 1426-1443.
Kimura et al., "Epitaxial Film Transfer Technique for Producing Single Crystal Si Film on an Insulating Substrate," Appl. Phys. Lett. 43(3), Aug. 1, 1983, pp. 263-265.

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