Semiconductor power module

Details Semiconductor power module Semiconductor power module

1985-02-25

1987-12-01

James, Andrew J.

357 68, 357 79, 357 74, H01L 21447, H01L 2310, H01L 2340, H01L 2314

Patent

active

047107952

ABSTRACT:
A semiconductor power module includes at least two mutually parallel ceramic substrates each having two sides, metallizations disposed on at least one side of each of the substrates, at least one controlled semiconductor power component disposed between each two respective substrates and contacted by the metallizations above and below the component, the substrate above the component having at least one hole formed therein above the component for accommodting control connections to the component.

REFERENCES:
patent: 3786375 (1974-01-01), Sato et al.
patent: 4172261 (1979-10-01), Tsuzuki et al.
patent: 4259684 (1981-03-01), Dean et al.
patent: 4538170 (1985-08-01), Yerman

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