Reflective, thin film transistor addressed, matrix liquid crysta

Details Reflective, thin film transistor addressed, matrix liquid crysta Reflective, thin film transistor addressed, matrix liquid crysta

1983-05-25

1987-02-17

Corbin, John K.

350337, 350338, G02F 1135

Patent

active

046435301

ABSTRACT:
A matrix liquid crystal display device comprising a reflecting plate and a polarizing plate coated on an insulating substrate, a thin film transistor arranged on the insulating substrate in matrix configuration, and a liquid crystal sandwiched between the insulating substrate and a glass plate. A cross-talk between picture elements caused by transmission or reflection of light on the substrate is prevented. The thin film transistor is formed by a semiconductor film made of amorphous silicon or a gate insulating film made of silicon dioxide which is easily formed at low temperature under 40.degree. C. by plasma CVD method or the like.

REFERENCES:
patent: 3912366 (1975-10-01), Sprokel
patent: 3941901 (1976-03-01), Harsch
patent: 3967253 (1976-06-01), Tsuruishi
patent: 4217160 (1980-08-01), Perregaux
patent: 4386352 (1983-05-01), Nonomura et al.
patent: 4431271 (1984-02-01), Okubo

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