Modulation doped field effect transistor with doped Si.sub.x Ge.

Details Modulation doped field effect transistor with doped Si.sub.x Ge. Modulation doped field effect transistor with doped Si.sub.x Ge.

1986-12-01

1987-12-01

Clawson, Jr., Joseph E.

357 4, 357 16, 357 15, 357 61, H01L 2980

Patent

active

047107880

ABSTRACT:
A modulation doped field effect transistor (MODFET) having an n-conductive channel. This channel is produced by a heterostructure formed on a silicon substrate and composed of a modulation doped Si.sub.1-x Ge.sub.x layer as well as an undoped Si layer.

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