Semiconductor device

Details Semiconductor device Semiconductor device

1984-12-27

1987-12-01

James, Andrew J.

357 22, 357 58, 357 56, H01L 29161, H01L 2974, H01L 2912, H01L 2906

Patent

active

047107871

ABSTRACT:
A semiconductor device is provided comprising a control electrode for forming carriers at a junction interface between first and second layers of different materials and for controlling the carriers, a first electrode which is electronically connected to the carriers, and a second electrode region for taking out the carriers in a direction perpendicular to the junction interface. Since the two-dimensional carriers are caused to flow as a current in the direction perpendicular to a plane on which the carriers exist, a great current can be derived as an operating current.

REFERENCES:
patent: 4141021 (1979-02-01), Decker
patent: 4424525 (1984-01-01), Mimura
patent: 4455564 (1984-06-01), Delagebeaudeuf et al.
Luryi et al., "Unipolar Transistor Based on Charge Injection", 1983, IEEE IEDM Late News Paper #5.8, Presented Dec. 5, 1983, with notes taken by Examiner Larkins.

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