Wide band gap semiconductor alloy material

Details Wide band gap semiconductor alloy material Wide band gap semiconductor alloy material

1986-06-09

1987-12-01

Edlow, Martin H.

357 30, 357 58, H01L 4500

Patent

active

047107863

ABSTRACT:
A wide band amorphous semiconductor alloy including a host matrix of silicon and incorporating therein carbon or nitrogen and a plurality of different and complimentary density of states reducing elements.

REFERENCES:
patent: 4409605 (1983-10-01), Ovshinsky

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