Method of fabricating phase shifting reticles using ion implanta

Details Method of fabricating phase shifting reticles using ion implanta Method of fabricating phase shifting reticles using ion implanta

1991-03-26

1993-06-08

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430311, 430396, G03F 900

Patent

active

052178307

ABSTRACT:
A method of fabricating a phase shifting reticle that can be used as a mask in photolithographic processes such as semiconductor wafer patterning. A transparent quartz substrate is first coated with a patterned resist. The quartz substrate is then subjected to high voltage ion bombardment to produce a pattern of ion implant areas on the substrate. The ion implantation is closely controlled to produce areas on the substrate having an index of refraction different than the quartz substrate and selected to achieve a 180.degree. phase shift. An opaque film is then deposited over the substrate and patterned with openings. This produces a repetitive pattern of alternating light transmission openings and phase shifters having opaque light blockers on either side.

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