Semiconductor device having polycrystalline silicon region formi

Details Semiconductor device having polycrystalline silicon region formi Semiconductor device having polycrystalline silicon region formi

1992-10-20

1995-02-21

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With specified electrode means

257 64, 257627, 257486, 257754, 257773, H01L 2904, H01L 2972

Patent

active

053919122

ABSTRACT:
This invention relates to a semiconductor device, in which a singlecrystal semiconductor substrate whose principal surface is (111) is etched from the principal surface thereof in the direction perpendicular thereto to form a vertical trench and a lateral trench is formed at the bottom portion of the side wall of the vertical trench by effecting an anisotropic etching with respect to crystallographical axes so that the etching proceeds in the direction of <110> axis, the lateral and the vertical trenches being filled with polycrystalline or amorphous semiconductor or insulator.

REFERENCES:
patent: 4839309 (1989-06-01), Easter et al.
patent: 4984048 (1991-01-01), Sagara et al.
patent: 5227660 (1993-07-01), Horiuchi et al.

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