Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-01-22
1996-09-24
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 63, H01L 2904
Patent
active
055593445
ABSTRACT:
A thin-film semiconductor device includes a plurality of thin-film semiconductor elements each having a gate electrode formed on a substrate, an insulating film formed on the gate electrode, a semiconductor film formed on the insulating film and doped with an n-type impurity, and source and drain electrodes formed on the semiconductor film and separated from each other, that region of the semiconductor film which corresponds to a gap between the source electrode and the drain electrode, being doped with a p-type impurity so that the p-type impurity concentration is equal to or greater than the n-type impurity concentration, to form an intrinsic layer, scanning-signal transmitting electrode lines each formed so as to connect the gate electrodes of some of the thin-film semiconductor elements, video-signal transmitting electrode lines each formed so as to connect the drain electrodes of some of the thin-film semiconductor elements, and pixel electrodes each connected to the source electrode of one of the thin-film semiconductor elements. Preferably, the n-type impurity concentration and p-type impurity concentration in that region of the semiconductor film which corresponds to a gap between the source electrode and the drain electrode, decrease exponentially with the depth from the surface of the region, to obtain a thin-film semiconductor device having excellent characteristics.
REFERENCES:
patent: 4555721 (1985-11-01), Bansal et al.
patent: 4720736 (1988-01-01), Takafuji et al.
patent: 5047360 (1991-09-01), Nicholas
patent: 5070379 (1991-12-01), Nomoto et al.
patent: 5114869 (1992-05-01), Tanaka et al.
Bowers Courtney A.
Crane Sara W.
Hitachi , Ltd.
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