Semiconductor bipolar integrated circuit device and method for f

Details Semiconductor bipolar integrated circuit device and method for f Semiconductor bipolar integrated circuit device and method for f

1985-01-28

1987-02-17

Chaudhuri, Olik

Metal working

Method of mechanical manufacture

Assembling or joining

29576W, 148 15, 148DIG10, 148DIG23, 148DIG87, 357 34, 357 92, H01L 21223, H01L 21265

Patent

active

046428836

ABSTRACT:
Disclosed is a structure of a semiconductor integrated circuit device including circuit elements such as a bipolar transistor and I.sup.2 L. The structure comprises a buried layer formed by the ion implantation method using an insulating layer, having a window with tapered edges at the surface of semiconductor substrate, as a mask. A part of the buried layer appears at the surface of the semiconductor substrate, thus establishing the connection of electrodes. The circuit element is formed in the region bounded by the buried layer and the window.

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