Method of manufacturing nonvolatile semiconductor memory device

Details Method of manufacturing nonvolatile semiconductor memory device Method of manufacturing nonvolatile semiconductor memory device

1985-05-17

1987-02-17

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148 15, 148187, 148DIG82, 357 2312, 357 2314, 357 91, G11C 1140, H01L 21283

Patent

active

046428810

ABSTRACT:
A method of manufacturing a nonvolatile semiconductor memory device having a gate oxide layer including a relatively thin silicon dioxide layer. This gate oxide layer including the thin silicon dioxide layer is formed by the steps of forming the gate oxide film on a semiconductor element region in a silicon substrate; removing a portion of the gate oxide film to expose a portion of the silicon substrate; implanting impurity ions in the exposed portion of the substrate to an extent that a peak concentration of the impurity ions exceeds a solid solution limit at a temperature of the following thermal annealing step; activating the implanted impurity by thermal annealing so as to form a high impurity concentration layer and thermally oxidizing a surface of the high impurity concentration layer to form the thin silicon dioxide layer.

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Topich et al, Appl. Phys. Letts., 41 (1982) 641.

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